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IRG7R313U

PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction tempera

文件:242.59 Kbytes 页数:8 Pages

IRF

IRG7R313UPBF

PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction tempera

文件:242.59 Kbytes 页数:8 Pages

IRF

IRG7R313UPbF

PDP TRENCH IGBT

Infineon

英飞凌

IRG7R313

PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction tempera

文件:242.59 Kbytes 页数:8 Pages

IRF

详细参数

  • 型号:

    IRG7R313U

  • 功能描述:

    IGBT 晶体管 330V 20A 1.35V PDP

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
23+
TO-252
1520
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
IR
24+
TO-252
5000
全现原装公司现货
询价
IR
2022+
10050
全新原装 货期两周
询价
IR
23+
TO-252
50000
全新原装正品现货,支持订货
询价
IR
25+
TO-252
10000
原装现货假一罚十
询价
IR
2022+
TO-252
30
原厂代理 终端免费提供样品
询价
IR
ROHS
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
IR
25+
ROHS
880000
明嘉莱只做原装正品现货
询价
IR
23+
TO-252
8000
只做原装现货
询价
更多IRG7R313U供应商 更新时间2026-2-4 15:41:00