IRG7R313U中文资料PDF规格书
IRG7R313U规格书详情
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
产品属性
- 型号：
IRG7R313U
- 功能描述：
IGBT 晶体管 330V 20A 1.35V PDP
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
1520 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
IR |
22+ |
TO-252 |
88773 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
IR |
22+ |
TO-252 |
88773 |
询价 | |||
IR |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
1932+ |
TO-252 |
473 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
IR |
23+ |
NA/ |
3260 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
1932+ |
TO-252 |
473 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
ROHS |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
2011 |
ROHS |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 |
