Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 22A 66W DPAK

INFINEON

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 22A 66W DPAK

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A)

Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. • Industry standard TO-252AA package • Co

文件：264.06 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. • Industry standard TO-252AA package. • Combiness very lo

文件：399.38 Kbytes 页数：10 Pages

IRF