| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit 文件:1.48013 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit 文件:1.48013 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
60A 60V N CHANNEL POWER MOSFET FEATURES ♦ Low ON Resistance ♦ Low Gate Charge ♦ Peak Current vs Pulse Width Curve ♦ Inductive Switching Curves APPLICATION ♦ DC motor control ♦ UPS ♦ Class D Amplifier 文件:157.02 Kbytes 页数:5 Pages | FCI 富加宜 | FCI | ||
Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件:229.74 Kbytes 页数:8 Pages | IRF | IRF | ||
N-CHANNEL Power MOSFET FEATURES ♦ Low ON Resistance ♦ Low Gate Charge ♦ Peak Current vs Pulse Width Curve ♦ Inductive Switching Curves APPLICATION ♦ DC motor control ♦ UPS ♦ Class D Amplifier 文件:150.32 Kbytes 页数:5 Pages | SUNTAC | SUNTAC | ||
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件:145.04 Kbytes 页数:10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件:216.82 Kbytes 页数:10 Pages | IRF | IRF | ||
Ultra Low On-Resistance Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件:149.39 Kbytes 页数:8 Pages | IRF | IRF | ||
Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件:3.25565 Mbytes 页数:8 Pages | KERSEMI | KERSEMI | ||
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件:145.04 Kbytes 页数:10 Pages | IRF | IRF |
技术参数
- Ptot(W):
94
- ID(A):
49
- BVDSS(V):
55
- Package:
TO-220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
25+ |
TO-220 |
45000 |
IR/VISHAY全新现货IRFZ44即刻询购立享优惠#长期有排单订 |
询价 | ||
台产大芯片 |
24+ |
TO-220 |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
SAMSUNG |
05+ |
原厂原装 |
390 |
只做全新原装真实现货供应 |
询价 | ||
IR |
2015+ |
TO-220 |
19898 |
专业代理原装现货,特价热卖! |
询价 | ||
IR |
24+ |
TO-220 |
5000 |
询价 | |||
IR |
25+ |
PLCC-44 |
18000 |
原厂直接发货进口原装 |
询价 | ||
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | |||
IR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
24+ |
原厂封装 |
50 |
原装现货假一罚十 |
询价 |
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