丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

文件：243.93 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel MOSFET

General Description The IRFZ44NS/IRFZ44N uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rg e. It ca n be used in a wide variety of applications.

文件：828.79 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：D2PAK；Package：TO-263；N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET

文件：1.02414 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

HEXFET짰Power MOSFET

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

文件：339.08 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

文件：340.05 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

文件：340.05 Kbytes 页数：11 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation

文件：1.4928 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Advanced process technology • Ultra low on-resistance • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ44, SiHFZ44 for linear / audio applications • Material categorization: for definitions of compli

文件：1.24363 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：153.64 Kbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

文件：1.24175 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司