55A 50V N CHANNEL POWER MOSFET

FEATURES ◆ Ultra Low ON Resistance ◆ Low Gate Charge ◆ Dynamic dv/dt Rating ◆ Inductive Switching Curves ◆ Peak Current vs Pulse Width Curve APPLICATION ◆ Buck Converter High Side Switch ◆ DC motor control , Ups ...etc , & other Application

文件：154.74 Kbytes 页数：5 Pages

FCI

富加宜

Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：100.57 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin a

文件：121.82 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

DESCRIPTION • Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin a

文件：76.78 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL Power MOSFET

FEATURES ◆ Ultra Low ON Resistance ◆ Low Gate Charge ◆ Dynamic dv/dt Rating ◆ Inductive Switching Curves ◆ Peak Current vs Pulse Width Curve APPLICATION ◆ Buck Converter High Side Switch ◆ DC motor control , Ups ...etc , & other Application

文件：150.35 Kbytes 页数：5 Pages

SUNTAC

N-Channel Power MOSFET

DESCRIPTION Process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with lo

文件：132.39 Kbytes 页数：1 Pages

TGS

50A,60V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220

文件：1.79136 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

Advanced Process Technology

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：700.41 Kbytes 页数：8 Pages

KERSEMI

60V N-Channel MOSFET

General Description The IRFZ44NS/IRFZ44N uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rg e. It ca n be used in a wide variety of applications.

文件：828.79 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Advanced Process Technology

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides

文件：158.95 Kbytes 页数：8 Pages

SYC