Power MOSFET

Power MOSFET VDSS =55V, RDS(on) = 17.5 mohm, ID = 49 A N Channel

文件：141.91 Kbytes 页数：1 Pages

TEL

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：151.95 Kbytes 页数：10 Pages

IRF

HEXFET짰Power MOSFET

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

文件：339.08 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

文件：340.05 Kbytes 页数：11 Pages

IRF

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：1.01448 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

HEXFET-R Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：150.51 Kbytes 页数：8 Pages

IRF

N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in s

文件：70.53 Kbytes 页数：8 Pages

PHI

PHI

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：151.95 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件：1.08686 Mbytes 页数：10 Pages

KERSEMI

55V N-Channel MOSFET

DESCRIPTION This advanced Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：117.37 Kbytes 页数：1 Pages

TGS