| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Power MOSFET FEATURES • Advanced process technology • Ultra low on-resistance • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ44, SiHFZ44 for linear / audio applications • Material categorization: for definitions of compli 文件：1.24363 Mbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：1.24175 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：226.79 Kbytes 页数：8 Pages | IRF | IRF | ||
Power MOSFET FEATURES • Advanced process technology • Surface-mount (IRFZ44S, SiHFZ44S) • Low-profile through-hole (IRFZ44L, SiHFZ44L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p 文件：862.02 Kbytes 页数：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit 文件：1.48013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：327.43 Kbytes 页数：10 Pages | IRF | IRF | ||
Power MOSFET FEATURES • Advanced process technology • Surface-mount (IRFZ44S, SiHFZ44S) • Low-profile through-hole (IRFZ44L, SiHFZ44L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p 文件：862.02 Kbytes 页数：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit 文件：1.48013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit 文件：1.48013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit 文件：1.48013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技术参数
- Ptot(W)：
94
- ID(A)：
49
- BVDSS(V)：
55
- Package：
TO-220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
25+ |
TO-220 |
45000 |
IR/VISHAY全新现货IRFZ44即刻询购立享优惠#长期有排单订 |
询价 | ||
台产大芯片 |
24+ |
TO-220 |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
SAMSUNG |
05+ |
原厂原装 |
390 |
只做全新原装真实现货供应 |
询价 | ||
IR |
2015+ |
TO-220 |
19898 |
专业代理原装现货,特价热卖! |
询价 | ||
IR |
24+ |
TO-220 |
5000 |
询价 | |||
IR |
25+ |
PLCC-44 |
18000 |
原厂直接发货进口原装 |
询价 | ||
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | |||
IR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
24+ |
原厂封装 |
50 |
原装现货假一罚十 |
询价 |
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