Advanced Power MOSFET

BVDSS = 500 V RDS(on) = 0.85 Ω ID = 4.6 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 mA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 W (Typ.)

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Fairchild

仙童半导体

isc Silicon NPN Power Transistor

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ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：911.1 Kbytes 页数：10 Pages

Fairchild

仙童半导体

Low gate charge ( typical 41 nC)

文件：1.63771 Mbytes 页数：9 Pages

KERSEMI

500V N-Channel MOSFET

文件：908.03 Kbytes 页数：10 Pages

Fairchild

仙童半导体