HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：1.34872 Mbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：5.56784 Mbytes 页数：10 Pages

KERSEMI

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：5.33157 Mbytes 页数：10 Pages

KERSEMI

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A)

Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024) • St

文件：173.92 Kbytes 页数：6 Pages

IRF

900 MHz transmit modulator and 1.3 GHz fractional-N synthesizer

DESCRIPTION This specification defines the requirements for a transmitter modulator and fractional–N synthesizer IC to be used in cellular telephones which employ the North American Dual Mode Cellular System (IS–136). FEATURES • Low current from 3.75V supply • Low phase noise • Main loop with

文件：151.91 Kbytes 页数：23 Pages

PHI

PHI

Advanced Power MOSFET

文件：230.51 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体