首页 >IRFR9220TRR>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFR9220TRR | Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is 文件:2.04248 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFR9220TRR | Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is 文件:4.43521 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | |
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is 文件:4.55832 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | ||
Dynamic dV/dt Rating DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is 文件:4.43521 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is 文件:2.04248 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is 文件:4.55832 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET 文件:785.7 Kbytes 页数:13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号:
IRFR9220TRR
- 功能描述:
MOSFET P-Chan 200V 3.6 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
36800 |
询价 | |||
VISHAY |
25+ |
TO-252 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay Siliconix |
2022+ |
TO-252-3,DPak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
询价 | ||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
VISHAY |
25+23+ |
TO-252 |
27846 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY(威世) |
2447 |
TO-252-3 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
IR |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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