900 MHz transmit modulator and 1.3 GHz fractional-N synthesizer

DESCRIPTION This specification defines the requirements for a transmitter modulator and fractional–N synthesizer IC to be used in cellular telephones which employ the North American Dual Mode Cellular System (IS–136). FEATURES • Low current from 3.75V supply • Low phase noise • Main loop with

文件：151.91 Kbytes 页数：23 Pages

PHI

PHI

900 MHz transmit modulator and 1.3 GHz fractional-N synthesizer

恩XP

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Lower RDS(ON) : 0.206 Ω (Typ.)

文件：230.52 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：321.74 Kbytes 页数：2 Pages

ISC

无锡固电

Avalanche Rugged Technology

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Lower RDS(ON) : 0.206 Ω (Typ.)

文件：236 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体