Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Lower RDS(ON) : 0.206 Ω (Typ.)

文件：230.52 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：321.74 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件：913.36 Kbytes 页数：4 Pages

BYCHIP

百域芯

Avalanche Rugged Technology

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Lower RDS(ON) : 0.206 Ω (Typ.)

文件：236 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体