Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rating • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/d

文件：643.8 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes

文件：583.95 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.43395 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：224.27 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：224.27 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

HEXFET짰Power MOSFET

文件：182.39 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

文件：1.59553 Mbytes 页数：8 Pages

IRF

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Isolated central mounting hole;

Vishay

威世科技

MOS(场效应管)

Infineon

英飞凌

Power MOSFET

• Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current;

Vishay

威世科技