IRFPC50LC_V01中文资料威世科技数据手册PDF规格书

FEATURES

• Ultra low gate charge

• Reduced gate drive requirement

• Enhanced 30 V VGS rating

• Reduced Ciss, Coss, Crss

• Isolated central mounting hole

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Power MOSFET technology the device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability of Power MOSFETs offer the

designer a new standard in power transistors for switching

applications.

The TO-247AC package is preferred for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because its isolated mounting hole.