Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissip

文件：1.65092 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Vishay

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissip

文件：1.65092 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：916.61 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Improved inductive ruggedness

文件：308.86 Kbytes 页数：5 Pages

SAMSUNG

三星

N-CHANNEL MOSFET in a TO-220F Plastic Package

文件：814.08 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子