Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.289 Ω(Typ.)

文件：263.83 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

QUAD N-CHANNEL ENHANCEMENT MOSFETS

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SEME-LAB

4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use

文件：60.03 Kbytes 页数：7 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power

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VishayVishay Siliconix

威世威世科技公司