200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

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Fairchild

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10.2A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.86 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL MOSFET in a TO-220F Plastic Package

文件：814.08 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel MOSFET uses advanced trench technology

文件：1.13919 Mbytes 页数：5 Pages

DOINGTER

杜因特

Improved inductive ruggedness

文件：308.86 Kbytes 页数：5 Pages

Samsung

三星

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

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isc N-Channel MOSFET Transistor

文件：270.97 Kbytes 页数：2 Pages

ISC

无锡固电

Improved inductive ruggedness

Samsung

三星

中低压MOS≤200V

BlueRocket

蓝箭电子

Rugged Gate Oxide Technology

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS= 200V Lower RDS(ON) : 0.144 (Typ. )

文件：325.6 Kbytes 页数：7 Pages

Fairchild

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