Single channel high reliability power MOSFETs

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Infineon

英飞凌

POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)

RDS(on) 0.020 Ω ID 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-estab

文件：218.41 Kbytes 页数：6 Pages

IRF

Simple Drive Requirements

文件：219.49 Kbytes 页数：7 Pages

IRF

N-CHANNEL POWER MOSFET

VDSS 60V ID(cont) 45A RDS(on) 0.027Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES

文件：23.58 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB