高可靠性功率 MOSFET

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Infineon

英飞凌

Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

文件：171.05 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.7043 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：1.68986 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世科技