HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

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IRF

Integrated Circuit FM Multiplex Stereo Demodulator

Description: The NTE1006 is an integrated circuit in a 14–Lead DIP type package designed for use as an FM multiplex stereo demodulator. This device includes all the fundamental functions including a composite amp, doubler, decoder, separation controller, and lamp driver. Features: ● Suitable fo

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NTE

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surg

文件：60.38 Kbytes 页数：2 Pages

PANJIT

強茂

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes)

FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound Exceeds environmental standards of MIL-S-19500/228 Low power loss, high efficiency Low forward voltage, high curr

文件：59.75 Kbytes 页数：2 Pages

PANJIT

強茂