200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V • Low gate charge ( typical 22 nC) • Low Crss ( typical 22 pF) • Fast switching • 100 av

文件：648.95 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V • Low gate charge ( typical 22 nC) • Low Crss ( typical 22 pF) • Fast switching • 100 av

文件：1.03019 Mbytes 页数：8 Pages

KERSEMI

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

文件：96.49 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Silicon Rectifier Fast Recovery, Dual, Center Tap

Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference. Features: ● Low Forward Voltage ● High Current Capabil

文件：18.35 Kbytes 页数：2 Pages

NTE

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

文件：34.71 Kbytes 页数：2 Pages

PANJIT

強茂