HEXFET Power MOSFET

Through-Hole Packags TO-220 FullPak (Fully Isolated)

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HEXFET Power MOSFET

Infineon

英飞凌

TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)

100 Volt, 0.028Ω, HEXFET Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFETs are well known, prov

文件：132.03 Kbytes 页数：4 Pages

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N?밅HANNEL POWER MOSFET

文件：46.66 Kbytes 页数：2 Pages

SEME-LAB

Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：185.43 Kbytes 页数：8 Pages

IRF