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IRFE024

SimpleDriveRequirements

IRF

International Rectifier

IRFF024

60V,N-CHANNEL

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsof

IRF

International Rectifier

IRFF024

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFL024

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075Ω ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRFL024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075Ω ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRFL024N

AdvancedProcessTechnology

IRF

International Rectifier

IRFL024N

SurfaceMount

IRF

International Rectifier

IRFL024NPBF

HEXFET짰PowerMOSFET

VDSS=55V RDS(on)=57.5mΩ ID=5.1A Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFL024NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFL024NTR

SurfaceMount

IRF

International Rectifier

详细参数

  • 型号:

    IRFC024R

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP

供应商型号品牌批号封装库存备注价格
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
只做原装现货
询价
IR
23+
7000
询价
IR
23+
TO220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
23+
NA
291
专做原装正品,假一罚百!
询价
更多IRFC024R供应商 更新时间2025-5-3 14:00:00