Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel

文件：1.20081 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世

P-CHANNEL 50 VOLT POWER MOSFETs

DESCRIPTION The HEXFET® technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel HEXFETd are

文件：220.55 Kbytes 页数：6 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -8.9A@ TC=25℃ · Drain Source Voltage -VDSS=-50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.33Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.31 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：280.24 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel

文件：1.20081 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世

Power MOSFET

·P-Channel Versatility\n·Compact Plastic Package\n·Fast Switching;

Vishay

威世

Power MOSFET

·P-Channel Versatility\n·Compact Plastic Package\n·Fast Switching;

Vishay

威世