IRF9Z34STRRPBF资料datasheet下载供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRF9Z34STRRPBF	文件：2.46013 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.46013 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRF9Z34STRRPBFA	文件：204.41 Kbytes Page：9 Pages	Power MOSFET 文件：204.41 Kbytes 页数：9 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFI9Z34G	文件：172.55 Kbytes Page：6 Pages	HEXFET POWER MOSFET 文件：172.55 Kbytes 页数：6 Pages	IRF	IRF
IRFI9Z34G	文件：1.44545 Mbytes Page：8 Pages	Power MOSFET 文件：1.44545 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFI9Z34G	文件：814.5 Kbytes Page：10 Pages	Power MOSFET FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see 文件：814.5 Kbytes 页数：10 Pages	VishayVishay Siliconix 威世科技	Vishay

更多IRF9Z34STRRPBF供应商更新时间2025-10-4 8:01:00