Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：334.68 Kbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件：2.46013 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件：2.46013 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：1.21157 Mbytes 页数：10 Pages

IRF

Power MOSFET

Advanced process technology\nSurface mount (IRF9Z34S, SiHF9Z34S)\n175 °C operating temperature;

Vishay

威世

Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

Infineon

英飞凌