| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF9Z34S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.46013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF9Z34S | Power MOSFET FEATURES • Advanced process technology • Surface mount (IRF9Z34S, SiHF9Z34S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in 文件：204.41 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF9Z34S | Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：334.68 Kbytes 页数：10 Pages | IRF | IRF | |
Power MOSFET FEATURES • Advanced process technology • Surface mount (IRF9Z34S, SiHF9Z34S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in 文件：204.41 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Surface Mount Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：1.21157 Mbytes 页数：10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.46013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.46013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.46013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.46013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.46013 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号：
IRF9Z34S
- 功能描述：
MOSFET P-Chan 60V 18 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
06+ |
TO-263 |
7000 |
全新原装 绝对有货 |
询价 | ||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
24+ |
TO-263 |
34 |
询价 | |||
IR |
24+ |
原厂封装 |
240 |
原装现货假一罚十 |
询价 | ||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
23+ |
NA |
407 |
专做原装正品,假一罚百! |
询价 | ||
IR |
25+23+ |
TO-263 |
27673 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
询价 |
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