Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件：2.46013 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件：2.46013 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：204.41 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

文件：172.55 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：1.44545 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see

文件：814.5 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司