6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：67.52 Kbytes 页数：7 Pages

INTERSIL

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-204AA/AE)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-sta

文件：152.83 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

文件：153.89 Kbytes 页数：7 Pages

IRF

isc N-Channel MOSFET Transistor

DESCRIPTION • Repetitive Avalanche Ratings • Dynamic dv/dt Rating • Hermetically Sealed • Simple Drive Requirements • Ease of Paralleling APPLICATIONS • Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse ci

文件：48.66 Kbytes 页数：2 Pages

ISC

无锡固电

Simple Drive Requirements

文件：153.89 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

Infineon

英飞凌