HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed

文件：412.48 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

文件：338.34 Kbytes 页数：2 Pages

ISC

无锡固电

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

Infineon

英飞凌

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件：835.99 Kbytes 页数：11 Pages

IRF

HEXFET

Power MOSFET

文件：362.47 Kbytes 页数：12 Pages

IRF

N-Channel MOSFET Transistor

文件：339.08 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFETPower MOSFET

文件：291.45 Kbytes 页数：8 Pages

IRF

75V 单 N 通道 StrongIRFET ™功率 MOSFET，采用 TO-220 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Infineon

英飞凌

HEXFETPower MOSFET

Infineon

英飞凌