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IRFB3207

HEXFET Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Worldwide Best RDS(on) in TO-220 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance a

文件:385 Kbytes 页数:11 Pages

IRF

IRFB3207

N-Channel MOSFET Transistor

文件:338.79 Kbytes 页数:2 Pages

ISC

无锡固电

IRFB3207

High Efficiency Synchronous Rectification in SMPS

文件:1.44902 Mbytes 页数:11 Pages

KERSEMI

IRFB3207

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度\n ;

Infineon

英飞凌

IRFB3207PBF

HEXFET짰Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA

文件:383.2 Kbytes 页数:12 Pages

IRF

IRFB3207Z

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.1mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

文件:338.69 Kbytes 页数:2 Pages

ISC

无锡固电

IRFB3207ZG

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.1mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

文件:338.68 Kbytes 页数:2 Pages

ISC

无锡固电

IRFB3207ZGPBF

HEXFETPower MOSFET

Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching ● Hard Switched and High Frequency Circuits Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● En

文件:291.9 Kbytes 页数:8 Pages

IRF

IRFB3207ZPBF

HEXFET Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA

文件:829.1 Kbytes 页数:11 Pages

IRF

IRFB3207PBF

High Efficiency Synchronous Rectification in SMPS

文件:384.16 Kbytes 页数:12 Pages

IRF

技术参数

  • OPN:

    IRFB3207PBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    75 V

  • RDS (on) @10V max:

    4.5 mΩ

  • ID @25°C max:

    170 A

  • QG typ @10V:

    180 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
17+
NA
6200
100%原装正品现货
询价
IR
24+
TO-220AB
8866
询价
IR
24+
原厂封装
101
原装现货假一罚十
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
IR
16+
TO-220
10000
全新原装现货
询价
IR
25+
TO220
2650
原装优势!绝对公司现货
询价
IR
24+
SMD
12000
原厂/代理渠道价格优势
询价
IR
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
25+
to-220
5800
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多IRFB3207供应商 更新时间2026-3-10 15:08:00