N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.1mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

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ISC

无锡固电

HEXFET

Power MOSFET

Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching ● Hard Switched and High Frequency Circuits Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● En

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IRF

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS;

Infineon

英飞凌

HEXFET Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA

文件：829.1 Kbytes 页数：11 Pages

IRF

isc N-Channel MOSFET Transistor

文件：304.51 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Worldwide Best RDS(on) in TO-220 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance a

文件：385 Kbytes 页数：11 Pages

IRF