6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

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INTERSIL

isc N-Channel MOSFET Transistor

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ISC

无锡固电

TO220

IR

国际整流器

上传：深圳市拓亿芯电子有限公司

TO-220-3

INFINEON

英飞凌

上传：深圳市壹芯创科技有限公司

TO-220

INFINEON/英飞凌

上传：深圳市赛特兴科技有限公司