Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

Low Gate Charge Qg Results in Simple Drive Requirement

文件：2.71363 Mbytes 页数：7 Pages

KERSEMI

PolarHV HiperFET Power MOSFET

PolarHV™ HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Fast Intrinsic Diode • Low Package Inductance Advantages • High Power Density • Easy to Mount • Space Savings Applications • S

文件：221.5 Kbytes 页数：4 Pages

IXYS

艾赛斯

Power MOSFET

文件：331.66 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电