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IRF9Z34STRL中文资料威世数据手册PDF规格书
IRF9Z34STRL规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z34S/SiHF9Z34S)
• Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
产品属性
- 型号:
IRF9Z34STRL
- 功能描述:
MOSFET P-Chan 60V 18 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
25+23+ |
TO-263 |
37908 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VishayIR |
24+ |
TO-263 |
1600 |
询价 | |||
SILICONIXVISHAY |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
Vishay Siliconix |
2022+ |
TO-263-3,D2Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR(国际整流器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
IR |
23+ |
TO-263 |
7000 |
询价 | |||
原装 |
1923+ |
NA |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
询价 | ||
Vishay(威世) |
2511 |
D2PAK(TO-263) |
36000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
询价 | ||
VishayVishay |
NEW- |
MOSFETs |
100000 |
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/ |
询价 |