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IRF9Z34STRL中文资料PDF规格书
IRF9Z34STRL规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z34S/SiHF9Z34S)
• Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
产品属性
- 型号:
IRF9Z34STRL
- 功能描述:
MOSFET P-Chan 60V 18 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2019 |
TO-263-2 |
55000 |
原装正品现货假一赔十 |
询价 | ||
NA |
19+ |
74814 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | |||
IR |
23+ |
TO-263 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO-263-2 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
原装 |
1923+ |
NA |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
询价 | ||
Vishay |
23+ |
D2PAK |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
VishayIR |
07+/08+ |
TO-263 |
1600 |
询价 | |||
INTERNATIONA |
05+ |
原厂原装 |
6704 |
只做全新原装真实现货供应 |
询价 | ||
VishaySiliconix |
19+ |
TO-263-3 |
56800 |
D2Pak(2Leads+Tab) |
询价 | ||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 |