Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：162.29 Kbytes 页数：10 Pages

IRF

isc P-Channel MOSFET Transistor

文件：273.72 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：1.19237 Mbytes 页数：10 Pages

KERSEMI

Advanced Process Technology

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文件：1.1075 Mbytes 页数：11 Pages

IRF

-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

\n优势:\n• RoHS Compliant\n• Low RDS(on)\n• Industry-leading quality\n• Dynamic dv/dt Rating\n• Fast Switching\n• Fully Avalanche Rated\n• 175°C Operating Temperature\n• P-Channel MOSFET;

Infineon

英飞凌