| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF9Z24S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.30422 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世 | Vishay | |
IRF9Z24S | Power MOSFET FEATURES • Advanced process technology • Surface mount (IRF9Z24S, SiHF9Z24S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in 文件：207.54 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | |
IRF9Z24S | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：311.01 Kbytes 页数：10 Pages | IRF | IRF | |
Power MOSFET FEATURES • Advanced process technology • Surface mount (IRF9Z24S, SiHF9Z24S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in 文件：207.54 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.30422 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.30422 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.30422 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.30422 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：2.30422 Mbytes 页数：8 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET 文件：207.54 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay |
详细参数
- 型号：
IRF9Z24S
- 功能描述：
MOSFET P-Chan 60V 11 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
160825 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
06+ |
TO-263 |
6000 |
全新原装 绝对有货 |
询价 | ||
VIS |
23+ |
TO263 |
5000 |
原装正品,假一罚十 |
询价 | ||
A |
24+ |
b |
9000 |
询价 | |||
VISHAY/IR |
24+ |
原厂封装 |
650 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
VISHAY |
2018+ |
TO-263 |
26976 |
代理原装现货/特价热卖! |
询价 | ||
IR |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
询价 | ||
IR |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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