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IRF9Z24STRRPBF中文资料威世科技数据手册PDF规格书
IRF9Z24STRRPBF规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
产品属性
- 型号：
IRF9Z24STRRPBF
- 功能描述：
MOSFET P-Chan 60V 11 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
8000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VISHAY/威世 |
08+ |
TO-263 |
8000 |
深圳原装进口无铅现货 |
询价 | ||
SEC |
24+/25+ |
23 |
原装正品现货库存价优 |
询价 | |||
IR |
23+ |
TO-220 |
35890 |
询价 | |||
Vishay Siliconix |
24+ |
D2PAK(TO-263) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
PHI |
25+ |
SOP3.9MM |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
VISHAY |
25+23+ |
TO-263 |
26928 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TH/韩国太虹 |
2048+ |
TO-263 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
24+ |
TO-263 |
1600 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
23+ |
原厂原装 |
6000 |
全新原装 |
询价 |
