IRF9Z24S中文资料IRF数据手册PDF规格书
IRF9Z24S规格书详情
描述 Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRF9Z24S)
● Low-profile through-hole (IRF9Z24L)
● 175°C Operating Temperature
● Fast Switching
● P- Channel
● Fully Avalanche Rated
产品属性
- 型号：
IRF9Z24S
- 功能描述：
MOSFET P-Chan 60V 11 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
23+ |
IGBT |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
IR |
NEW |
D2-Pak |
19526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
VISHAY/威世 |
23+ |
TO263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
SILICONIXVISHAY |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IR/VISH |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
A |
24+ |
b |
9000 |
询价 | |||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
IR |
22+ |
TO263 |
18000 |
原装正品 |
询价 |
