IRF9Z24S中文资料PDF规格书
IRF9Z24S规格书详情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRF9Z24S)
● Low-profile through-hole (IRF9Z24L)
● 175°C Operating Temperature
● Fast Switching
● P- Channel
● Fully Avalanche Rated
产品属性
- 型号：
IRF9Z24S
- 功能描述：
MOSFET P-Chan 60V 11 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
360000 |
原厂原装 |
1305 |
询价 | |||
VISHAY |
22+ |
NA |
35000 |
全新原装正品现货 |
询价 | ||
IR |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IR |
23+ |
D2-Pak |
8600 |
全新原装现货 |
询价 | ||
IR |
23+ |
D2-Pak |
19526 |
询价 | |||
IR |
21+ |
TO-263 |
5587 |
原装现货库存 |
询价 | ||
IR/INFIOEON |
24+23+ |
TO-220 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
IR |
2023+ |
TO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
TO-263 |
205182 |
一级代理原装正品,价格优势,支持实单! |
询价 |
