IRF9Z24S中文资料IRF数据手册PDF规格书
IRF9Z24S规格书详情
描述 Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRF9Z24S)
● Low-profile through-hole (IRF9Z24L)
● 175°C Operating Temperature
● Fast Switching
● P- Channel
● Fully Avalanche Rated
产品属性
- 型号：
IRF9Z24S
- 功能描述：
MOSFET P-Chan 60V 11 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
08+ |
TO-263 |
8000 |
询价 | |||
IR |
24+ |
TO-263 |
160825 |
明嘉莱只做原装正品现货 |
询价 | ||
SILICONIXVISHAY |
21+ |
NA |
5000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
VISHAY |
25+23+ |
TO-263 |
26928 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
TO-263 |
205182 |
一级代理原装正品,价格优势,支持实单! |
询价 | |||
IR |
2450+ |
TO-263 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
询价 | ||
IR |
95+ |
TO-263 |
723 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
A |
24+ |
b |
9000 |
询价 | |||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay |
23+ |
IGBT |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 |
