Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：162.29 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

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文件：172.98 Kbytes 页数：11 Pages

IRF

丝印：D2PAK；Package：TO-263；isc P-Channel MOSFET Transistor

文件：298.08 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；P-Channel 60 V (D-S) MOSFET

文件：931.22 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Advanced Process Technology

文件：1.07424 Mbytes 页数：10 Pages

KERSEMI

Advanced Process Technology

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文件：172.98 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：1.1075 Mbytes 页数：11 Pages

IRF

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：172.98 Kbytes 页数：11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：1.10846 Mbytes 页数：11 Pages

IRF

P 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Infineon

英飞凌