P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

三星

150 V, P-channel power MOSFET

Samsung

三星

75 Ohm TNC Male to BNC Female Adapter

文件：255.91 Kbytes 页数：2 Pages

PASTERNACK

NI Single-Board RIO Embedded Control and Acquisition Devices

文件：301.81 Kbytes 页数：3 Pages

NI

恩艾