Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：140.65 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

DESCRIPTION Third Generation MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

文件：365.38 Kbytes 页数：8 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6.7A@ TC=25℃ · Drain Source Voltage -VDSS=-60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.39 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：280.33 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• P-channel;

Vishay

威世科技

HEXFET Power MOSFET

Infineon

英飞凌