Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：277.14 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

文件：173.51 Kbytes 页数：6 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6.7A@ TC=25℃ · Drain Source Voltage -VDSS=-60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.61 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：270.13 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：277.86 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：158.97 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• P-channel;

Vishay

威世

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Infineon

英飞凌

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRF9Z14S, SiHF9Z14S) • Low-profile through-hole (IRF9Z14L, SiHF9Z14L) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.

文件：229.92 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件：2.45358 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司