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IRF9Z14LPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件:2.45358 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z14S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件:2.45358 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z14S

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRF9Z14S, SiHF9Z14S) • Low-profile through-hole (IRF9Z14L, SiHF9Z14L) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.

文件:229.92 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z14S

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:361.78 Kbytes 页数:10 Pages

IRF

IRF9Z14S_V01

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRF9Z14S, SiHF9Z14S) • Low-profile through-hole (IRF9Z14L, SiHF9Z14L) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.

文件:229.92 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z14SPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件:2.45358 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z14STRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件:2.45358 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z14STRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件:2.45358 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z14_17

Power MOSFET

文件:277.86 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z14_V01

Power MOSFET

文件:158.97 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRF9Z14

  • 功能描述:

    MOSFET P-Chan 60V 6.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
17+
TO-220AB
31518
原装正品 可含税交易
询价
IR
05+
原厂原装
4666
只做全新原装真实现货供应
询价
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
询价
IR
24+
TO-220
499
询价
IR
24+
原厂封装
5000
原装现货假一罚十
询价
IOR
25+
TO-220
2987
绝对全新原装现货供应!
询价
23+
原厂封装
9888
专做原装正品,假一罚百!
询价
IR
24+
TO220
32650
一级代理/放心采购
询价
IR/VISH
23+
TO-220
50000
全新原装正品现货,支持订货
询价
VISHAY
25+
TO-220
3000
就找我吧!--邀您体验愉快问购元件!
询价
更多IRF9Z14供应商 更新时间2025-12-1 14:01:00