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IRF9Z14LPBF中文资料威世科技数据手册PDF规格书
IRF9Z14LPBF规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of is low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF9Z14L/SiHF9Z14L) is available for low-profile applications.
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z14S/SiHF9Z14S)
• Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
产品属性
- 型号:
IRF9Z14LPBF
- 功能描述:
MOSFET P-Chan 60V 6.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
20+ |
TO-220 |
65300 |
一级代理/放心购买! |
询价 | ||
IR |
2236+ |
TO-220 |
15312 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
VISHAY/IR |
16+ |
原厂封装 |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-262 |
5367 |
原厂原装正品 |
询价 | ||
Vishay Siliconix |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
询价 | ||
IR |
23+ |
TO-262 |
10000 |
原装正品现货 |
询价 | ||
IR |
24+ |
TO-220 |
68500 |
原装现货实单支持 |
询价 | ||
IR |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
2016+ |
TO-262 |
6528 |
房间原装进口现货假一赔十 |
询价 |