IRF9Z14S中文资料IRF数据手册PDF规格书
IRF9Z14S规格书详情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z14L) is available for low profile applications.
● Advanced Process Technology
● Surface Mount (IRF9Z14S)
● Low-profile through-hole (IRF9Z14L)
● 175°C Operating Temperature
● Fast Switching
● P- Channel
● Fully Avalanche Rated
产品属性
- 型号:
IRF9Z14S
- 功能描述:
MOSFET P-Chan 60V 6.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
21+ |
TO-263 |
5587 |
原装现货库存 |
询价 | ||
VISHAY |
22+23+ |
TO263 |
73878 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
23+ |
TO-263 |
35890 |
询价 | |||
IR |
24+ |
TO-263 |
501338 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
IR |
TO-263 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
08+(pbfree) |
D2-Pak |
8866 |
询价 | |||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
2022 |
TO-263 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
VISHAY |
21+ |
TO-263 |
12588 |
原装正品,自己库存 假一罚十 |
询价 |