| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF9510S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：176.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | |
IRF9510S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：176.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | |
IRF9510S | Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid 文件：201.76 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | |
IRF9510S | Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
文件：176.75 Kbytes 页数：6 Pages | IRF | IRF | |
IRF9510S | Power MOSFET 文件：180.76 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | |
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid 文件：201.76 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：176.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：176.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi 文件：176.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET 文件：180.76 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世 | Vishay |
详细参数
- 型号：
IRF9510S
- 功能描述：
MOSFET P-Chan 100V 4.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
501325 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
24+ |
TO-263 |
1600 |
询价 | |||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IOR |
23+ |
TO263 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
IR |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
25+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
1923+ |
TO-263 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
询价 |
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