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IRF9530NSTRRPBF

Advanced Process Technology

VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530PBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半导体

IRF9530PBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF9530PBF

P-Channel100V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSwitch •LoadSwitchinHighCurrentApplications •DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF9530PBF

iscP-ChannelMOSFETTransistor

•DESCRIPTION •Powermanagementinnotebookcomputer •Portableequipmentandbatterypoweredsystems •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF9530PBF

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp

VishayVishay Siliconix

威世科技威世科技半导体

IRF9530S

Repetitiveavalancherated

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技威世科技半导体

IRF9530S

P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRF9530S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovid

VishayVishay Siliconix

威世科技威世科技半导体

IRF9530S

iscP-ChannelMosfetTransistor

FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRF9530NSTRRPBF

  • 功能描述:

    MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
D2PAK
8357
支持大陆交货,美金交易。原装现货库存。
询价
IR
24+
TO-263
5000
全现原装公司现货
询价
IR
1816+
.
6523
科恒伟业!只做原装正品,假一赔十!
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
08+PBF
TO-263
800
原装正品现货,可开发票,假一赔十
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
Infineon Technologies
21+
D2PAK
1600
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
三凌
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
询价
IR
08+PBF
TO-263
800
现货
询价
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
更多IRF9530NSTRRPBF供应商 更新时间2025-6-7 16:12:00