IRF840LCL资料datasheet下载供应代理第4页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CDBC840-HF	文件：461.87 Kbytes Page：4 Pages	SMDSchottkyBarrierRectifiers Features -Built-instrainrelief. -Highsurgeandcurrentcapability. -Foruseinlowvoltage,highfrequencyinvertorsfree -wheelingandpolarityprotection. -Metalsiliconjunctionwithguarding. -8.0Arectificationinsmallpackage.	COMCHIPComchip Technology 典琦典琦科技股份有限公司	COMCHIP
CDBG840-G	文件：61.59 Kbytes Page：2 Pages	SMDSchottkyBarrierDiode ReverseVoltage:20~60Volts ForwardCurrent:8A Features: •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-OUtilizingFlame RetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenviromentalstandardsofMIL-S-19500/228 •Lo	COMCHIPComchip Technology 典琦典琦科技股份有限公司	COMCHIP
CEB840A	文件：583.99 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB840A	文件：440.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB840B	文件：605.09 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB840G	文件：650.17 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB840G	文件：403.73 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB840L	文件：401.97 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED840A	文件：712.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7.5A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED840A	文件：404.1 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■500V,7.5A,RDS(ON)=0.85Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED840B	文件：518.95 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7.5A,RDS(ON)=0.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED840G	文件：624.15 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840A	文件：583.99 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840A	文件：440.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF840B	文件：605.09 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840G	文件：650.17 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840G	文件：403.73 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF840L	文件：401.97 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEM840	文件：316.92 Kbytes Page：1 Pages	IntelAtomE3800FamilyCOMExpressType10MiniModule	AXIOMTEKAxiomtek Co., Ltd. 艾讯股份有限公司	AXIOMTEK
CEP840A	文件：440.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET

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详细参数

型号：
IRF840LCL
功能描述：
MOSFET N-Chan 500V 8.0 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市亚泰盈科电子有限公司	IRF840LCL	IR/VISHAY		TO-262	30216	提供BOM表配单TEL:0755-83759919QQ:2355705587杜S	询价
深圳市勤思达科技有限公司	IRF840LCL	IR	2015+	TO-262	12500	全新原装,现货库存长期供应	询价
深圳市正川电子有限公司	IRF840LCL	IR	08+	TO262	3020	现货-ROHO	询价
深圳市一线半导体有限公司	IRF840LCL	IR	08+(pbfree)	TO-262	8866		询价
深圳市永贝尔科技有限公司	IRF840LCL	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市芯祺盛科技有限公司	IRF840LCL	IR	1746+	TO262	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳市宏捷佳电子科技有限公司	IRF840LCL	IR/VISHAY	23+	TO-262	12300	全新原装真实库存含13点增值税票!	询价
深圳市维尔达电子有限公司	IRF840LCL	IR	2023+	TO-262	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	IRF840LCL	IR	2020+	TO-262	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市安富世纪电子有限公司	IRF840LCL	IR	21+	TO-262	50000	终端可免费提供样品,欢迎咨询	询价

更多IRF840LCL供应商更新时间2024-6-14 9:10:00

详细参数

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